n-Type doping of a solution processed p-type semiconductor using isoelectronic surface dopants for homojunction fabrication
نویسندگان
چکیده
• Isoelectronic surface dopants can tune p-n type transport in nanoscale semiconductors. A shift from p-type to n-type conduction is demonstrated for thin Bi 2 Te 3 nanowires. Solution processability maintained during aqueous S 2? treatment ambient. Proposed mechanism based on introduction of a dopant band and Fermi level shift. Thermoelectric devices film transistors are fabricated using these materials. The junction one the fundamental requirements practical semiconductor-based electronic device. Designing heterojunction comprising dissimilar semiconductors calls careful energy considerations, both when selecting semiconductor materials as well metal contacts. homojunction single simplifies this task, levels already fairly similar, allowing easier selection Traditionally, homojunctions rely doping bulk achieve p- through controlled addition aliovalent via energy-intensive processes such ion implantation or thermal annealing. Exact control nanocrystalline significantly more challenging, due self-purification effects. However, owing their large areas, moieties be utilized dope nanostructures levels. In report, we present facile technique an isoelectronic order same semiconductor. We show that colloidal nanowires switched functionalization, thus increasing availability new solution-processable homojunctions.
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ژورنال
عنوان ژورنال: Applied Surface Science
سال: 2022
ISSN: ['1873-5584', '0169-4332']
DOI: https://doi.org/10.1016/j.apsusc.2022.153089